PBSS8110D datasheet(5/12 Pages) PHILIPS

Part #	PBSS8110D

Description	100 V, 1 A NPN low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 12 page

9397 750 12566

Product data sheet

Rev. 01 — 23 April 2004

5 of 12

Philips Semiconductors

PBSS8110D

100 V, 1 A NPN low VCEsat (BISS) transistor

7.

Characteristics

[1]

Pulse test tp ≤ 300 µs; δ ≤ 0.02.

Table 7:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =80V; IE = 0 A

-

100

nA

VCB =80V; IE =0A;

Tj = 150 °C

--50

µA

ICES

collector-emitter

cut-off current

VCE =80V; VBE = 0 V

-

100

nA

IEBO

emitter-base cut-off

current

VEB =4V; IC = 0 A

-

100

nA

hFE

DC current gain

VCE =10V; IC =1mA

150

-

VCE =10V; IC = 250 mA

150

-

500

VCE =10V; IC = 0.5 A

[1]

100

-

VCE =10V; IC =1A

[1]

80

-

VCEsat

collector-emitter

saturation voltage

IC = 100 mA; IB = 10 mA

--40

mV

IC = 500 mA; IB = 50 mA

-

120

mV

IC = 1 A; IB = 100 mA

-

200

mV

RCEsat

equivalent

on-resistance

IC = 1 A; IB = 100 mA

[1]

-

160

200

m

Ω

VBEsat

base-emitter

saturation voltage

IC = 1 A; IB = 100 mA

-

1.05

V

VBEon

base-emitter turn-on

voltage

VCE =10V; IC = 1 A

-

0.9

V

fT

transition frequency

VCE =10V; IC =50mA;

f = 100 MHz

100

-

MHz

Cc

collector capacitance

VCB =10V; IE =Ie =0A;

f=1MHz

-

7.5

pF

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