CY7C1512
PRELIMINARY
2
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied............................................. –55
°C to +125°C
Supply Voltage on VCC to Relative GND
[1] .... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] .....................................–0.5V to VCC +0.5V
DC Input Voltage[1]..................................–0.5V to VCC +0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage ........................................... >2001V
(per MIL–STD–883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Operating Range
Range
Ambient
Temperature[2]
VCC
Commercial
0
°C to +70°C
5V
± 10%
Industrial
–40
°C to +85°C
5V
± 10%
Electrical Characteristics Over the Operating Range[3]
Parameter
Description
Test Conditions
7C1512-15
7C1512-20
7C1512-25
Unit
Min.
Max.
Min.
Max.
Min.
Max.
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
2.4
2.4
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
0.4
0.4
0.4
V
VIH
Input HIGH Voltage
2.2
VCC+
0.3
2.2
VCC+
0.3
2.2
VCC+
0.3
V
VIL
Input LOW Voltage[1]
–0.3
0.8
–0.3
0.8
–0.3
0.8
V
IIX
Input Load Current
GND < VI < VCC
–1
+1
–1
+1
–1
+1
µA
IOZ
Output Leakage Current
GND < VI < VCC,Output Disabled
–5
+5
–5
+5
–5
+5
µA
IOS
Output Short Circuit Current[4] VCC = Max., VOUT = GND
–300
–300
–300
mA
ICC
VCC Operating
Supply Current
VCC = Max., IOUT = 0 mA,
f = fMAX = 1/tRC
140
130
120
mA
ISB1
Automatic CE
Power–Down Current
— TTL Inputs
Max. VCC, CE1 > VIH or
CE2 < VIL, VIN > VIH or VIN < VIL,
f = fMAX
40
30
30
mA
ISB2
Automatic CE
Power–Down Current
— CMOS Inputs
Max. VCC, CE1 > VCC – 0.3V,
or CE2 < 0.3V, VIN > VCC – 0.3V,
or VIN < 0.3V, f=0
5
5
5
mA
Parameter
Description
Test Conditions
7C1512-35
7C1512-70
Unit
Min.
Max.
Min.
Max.
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
2.4
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
0.4
0.4
V
VIH
Input HIGH Voltage
2.2
VCC+ 0.3
2.2
VCC+ 0.3
V
VIL
Input LOW Voltage[1]
–0.3
0.8
–0.3
0.8
V
IIX
Input Load Current
GND < VI < VCC
–1
+1
–1
+1
µA
IOZ
Output Leakage Current
GND < VI < VCC, Output Disabled
–5
+5
–5
+5
µA
IOS
Output Short
Circuit Current[4]
VCC = Max., VOUT = GND
–300
–300
mA
ICC
VCC Operating
Supply Current
VCC = Max., IOUT = 0 mA,
f = fMAX = 1/tRC
110
110
mA
ISB1
Automatic CE
Power-Down Current
— TTL Inputs
Max. VCC, CE1 > VIH or CE2 < VIL,
VIN > VIH or VIN < VIL, f = fMAX
25
25
mA
ISB2
Automatic CE
Power-Down Current
— CMOS Inputs
Max. VCC, CE1 > VCC – 0.3V, or CE2 <
0.3V, VIN > VCC – 0.3V, or VIN < 0.3V, f=0
5
5
mA
Notes:
1.
VIL (min.) = -2.0V for pulse durations of less than 20 ns.
2.
TA is the “instant on” case temperature.
3.
See the last page of this specification for Group A subgroup testing information.
4.
Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.