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27C16Q450 Datasheet(PDF) 1 Page - National Semiconductor (TI) |
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27C16Q450 Datasheet(HTML) 1 Page - National Semiconductor (TI) |
1 / 8 page TLD10329 January 1989 27C16 16384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified General Description The 27C16 is a high speed 16K UV erasable and electrically reprogrammable CMOS EPROM ideally suited for applica- tions where fast turnaround pattern experimentation and low power consumption are important requirements The 27C16 is packaged in a 24-pin dual-in-line package with transparent lid The transparent lid allows the user to ex- pose the chip to ultraviolet light to erase the bit pattern A new pattern can then be written into the device by following the programming procedure This EPROM is fabricated with the reliable high volume time proven P2CMOSTM silicon gate technology The 27C16 specified on this data sheet is fully compliant with MIL-STD-883 Revision C Features Y Access time down to 450 ns Y Low CMOS power consumption Active Power 2625 mW max Standby Power 053 mW max (98% savings) Y Performance compatible to NSC800TM CMOS micro- processor Y Single 5V power supply Y Pin compatible to MM2716 and higher density EPROMs Y Staticno clocks required Y TTL compatible inputsoutputs Y TRI-STATE output Y Windowed DIP Package Y Specifications guaranteed over full military temperature range (b55 Cto a125 C) Block Diagram TLD10329 – 1 Pin Names A0 – A10 Addresses CE Chip Enable OE Output Enable O0–O7 Outputs PGM Program NC No Connect TRI-STATE is a registered trademark of National Semiconductor Corporation NS800TM are P2CMOSTM trademarks of National Semiconductor Corporation C1995 National Semiconductor Corporation RRD-B30M105Printed in U S A |
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