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110RIA120 Datasheet(PDF) 2 Page - International Rectifier |
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110RIA120 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  110/111RIA Series 2 Bulletin I25204 rev. B 09/03 www.irf.com ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/VRRM, max. repetitive V RSM , maximum non- I DRM/IRRM max. Type number Code peak and off-state voltage repetitive peak voltage @ T J = TJ max. VV mA 110/111RIA 80 800 900 20 120 1200 1300 I T(AV) Max. average on-state current 110 A 180° conduction, half sine wave @ Case temperature 90 °C I T(RMS) Max. RMS on-state current 172 DC @ 83°C case temperature I TSM Max. peak, one-cycle 2080 t = 10ms No voltage non-repetitive surge current 2180 A t = 8.3ms reapplied 1750 t = 10ms 100% V RRM 1830 t = 8.3ms reappliedSinusoid al half wave, I2t Maximum I2t for fusing 21.7 t = 10ms No voltage Initial T J = TJ max. 19.8 t = 8.3ms reapplied 15.3 t = 10ms 100% V RRM 14.0 t = 8.3ms reapplied I2√t Maximum I2√t for fusing 217 KA2√s t = 0.1 to 10ms, no voltage reapplied V T(TO)1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 Low level value of on-state slope resistance r t2 High level value of on-state slope resistance V TM Max. on-state voltage 1.57 V Ipk= 350A, TJ = TJ max., tp = 10ms sine pulse I H Maximum holding current 150 I L Typical latching current 400 0.82 (16.7% x π x I T(AV) < I < π x IT(AV)), TJ = TJ max. 2.16 (16.7% x π x I T(AV) < I < π x IT(AV)), TJ = TJ max. 1.70 (I > π x I T(AV)),TJ = TJ max. Parameter 110/111RIA Units Conditions 1.02 (I > π x I T(AV)),TJ = TJ max. On-state Conduction KA2s V mΩ mA T J = 25°C, anode supply 6V resistive load di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs of turned-on current T J = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, dig/dt = 1A/µs Vd = 0.67% VDRM, TJ = 25°C I TM = 50A, TJ = TJ max., di/dt = -5A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 25Ω Parameter 110/111RIA Units Conditions td Typical delay time 1 Switching tq Typical turn-off time 110 µs 300 A/µs |
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