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K7N401801A Datasheet(PDF) 1 Page - Samsung semiconductor |
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K7N401801A Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 17 page K7N403601A 128Kx36 & 256Kx18 Pipelined NtRAMTM - 1 - Rev 1.0 May 2000 K7N401801A Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques- tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. Revision History Rev.No. 0.0 0.1 1.0 Remark Preliminary Preliminary Final History 1. Initial document. 1. Changed DC condition at Icc and ISB. Icc ; from 350mA to 400mA at -16, from 340mA to 390mA at -15, from 310mA to 360mA at -13, ISB ; from 130mA to 140mA at -16, from 120mA to 130mA at -15, from 120mA to 130mA at -13, 1. Final spec release 2. Changed input & output capacitance. CIN ; from 6pF to 5pF, COUT ; from 8pF to 7pF, Draft Date Jan. 20. 2000 April. 03. 2000 May. 15. 2000 |
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