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––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– s MSM38S/98S Data Sheet s
7
OKI SEMICONDUCTOR
[1] Typical condition is VDD = 3.3 V and Tj = 25° C for a typical process.
[2] RAM/ROM should be in power-down mode.
DC Characteristics
(VDD = 2.7 ~ 3.6 V, VSS = 0 V, Tj = -40° C ~ +85° C)
Parameter
Symbol
Conditions
Rated Value
Unit
Min
Typ[1]
Max
High-level input voltage
VIH
CMOS input
0.7xVDD
–
VDD+0.5
V
Low-level input voltage
VIL
CMOS input
-0.5
–
0.3xVDD
V
CMOS-level Schmitt Trigger input threshold
voltage
Vt+
–
–
2
0.76xVDD
V
Vt-
–
0.24xVDD
1
–
V
∆VT
Vt+ - Vt-
0.1xVDD
1
–
V
High-level output voltage
VOH
IOH = 1, 2, 4, 6, 8, 12 mA
2.2
–
–
V
Low-level output voltage
VOL
IOL = 1, 2, 4, 6, 8, 12, 24 mA
–
–
0.4
V
High-level input current
IIH
VIH = VDD
–
0.01
1
µA
VIH = VDD
(100 k
Ω pull down)
5
35
120
µA
Low-level input current
IIL
VIL = VSS
-1
-0.01
–
µA
VIL = VSS (100 kΩ pull up)
-120
-35
-5
µA
VIL = VSS (6 kΩ pull up)
-2
-.55
-.120
mA
3-state output leakage current
IOZH
VOH = VDD
–
0.01
1
µA
IOZL
VOL = VSS
-1
-0.01
–
µA
VOL = VSS (100 kΩ pull up)
-120
-35
-5
µA
VOL = VSS (6 kΩ pull up)
-2
-.55
-.12
mA
Stand-by current[2]
IDDS
Output open
VIH = VDD, VIL = VSS
–
0.1
10
µA
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