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2N5551 Datasheet(PDF) 1 Page - ON Semiconductor |
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2N5551 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 3 1 Publication Order Number: 2N5550/D 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector − Emitter Voltage VCEO 140 160 Vdc Collector − Base Voltage VCBO 160 180 Vdc Emitter − Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 W mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TO−92 CASE 29 STYLE 1 1 2 3 Preferred devices are recommended choices for future use and best overall value. See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ORDERING INFORMATION http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER 55xx Specific Device Code Y = Year WW = Work Week MARKING DIAGRAM 2N 55xx YWW |
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