2N6038 datasheet(1/8 Pages) ONSEMI

Part #	2N6038

Description	Plastic Darlington Complementary Silicon Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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Plastic Darlington

Complementary Silicon Power

Transistors

. . . designed for general–purpose amplifier and low–speed

switching applications.

• High DC Current Gain —

hFE = 2000 (Typ) @ IC = 2.0 Adc

• Collector–Emitter Sustaining Voltage — @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc

(Min) — 2N6036, 2N6039

• Forward Biased Second Breakdown Current Capability

IS/b = 1.5 Adc @ 25 Vdc

• Monolithic Construction with Built–In Base–Emitter Resistors to

LimitELeakage Multiplication

• Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic

Package

MAXIMUM RATINGS (1)

Rating

Symbol

2N6035

2N6038

2N6036

2N6039

Unit

Collector–Emitter Voltage

VCEO

60

80

Vdc

Collector–Base Voltage

VCB

60

80

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak

IC

4.0

8.0

Adc

Base Current

IB

100

mAdc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

40

0.32

Watts

W/

_C

Total Power Dissipation @ TA = 25_C

Derate above 25

_C

PD

1.5

0.012

Watts

Operating and Storage Junction

Temperature Range

TJ, Tstg

–65 to +150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

3.12

_C/W

Thermal Resistance, Junction to Ambient

θJA

83.3

_C/W

(1) Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor)

April, 2002 – Rev. 10

1

Publication Order Number:

2N6035/D

2N6035

2N6036

2N6038

2N6039

*ON Semiconductor Preferred Device

DARLINGTON

4–AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60, 80 VOLTS

40 WATTS

*

CASE 77–09

TO–225AA TYPE

PNP

NPN

3

2 1

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

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