2N6388 datasheet(1/8 Pages) ONSEMI

Part #	2N6388

Description	Plastic Medium-Power Silicon Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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Plastic Medium-Power

Silicon Transistors

. . . designed for general–purpose amplifier and low–speed

switching applications.

• High DC Current Gain —

hFE = 2500 (Typ) @ IC

= 4.0 Adc

• Collector–Emitter Sustaining Voltage – @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) — 2N6387

= 80 Vdc (Min) — 2N6388

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.0 Vdc (Max) @ IC

= 5.0 Adc — 2N6387, 2N6388

• Monolithic Construction with Built–In Base–Emitter Shunt Resistors

• TO–220AB Compact Package

*MAXIMUM RATINGS

Rating

Symbol

2N6387

2N6388

Unit

Collector–Emitter Voltage

VCEO

60

80

Vdc

Collector–Base Voltage

VCB

60

80

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak

IC

10

15

10

15

Adc

Base Current

IB

250

mAdc

Total Power Dissipation

@ TC = 25_C

Derate above 25

_C

PD

65

0.52

Watts

W/

_C

Total Power Dissipation

@ TA = 25_C

Derate above 25

_C

PD

2.0

0.016

Watts

W/

_C

Operating and Storage Junction,

Temperature Range

TJ, Tstg

–65 to +150

_C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.92

_C/W

Thermal Resistance, Junction to Ambient

R

θJA

62.5

_C/W

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor)

April, 2002 – Rev. 10

1

Publication Order Number:

2N6387/D

2N6387

2N6388

*ON Semiconductor Preferred Device

DARLINGTON

8 AND 10 AMPERE

NPN SILICON

POWER TRANSISTORS

60–80 VOLTS

65 WATTS

*

CASE 221A–09

TO–220AB

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

1

2

3

4

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