2N6426 datasheet(4/8 Pages) ONSEMI

Part #	2N6426

Description	Darlington Transistors

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2N6426 2N6427

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4

SMALL–SIGNALCHARACTERISTICS

Figure 6. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

5.0

7.0

10

20

3.0

Figure 7. High Frequency Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region

IB, BASE CURRENT (µA)

2.0

200k

5.0

0.04

4.0

2.0

1.0

0.8

0.6

0.4

0.2

TJ = 25°C

1.5

2.0

2.5

3.0

1.0

0.5

0.1

0.2

0.4

1.0 2.0

4.0

10

20

40

Cibo

Cobo

0.5

1.0

2.0

0.5

10

20

50

100 200

500

VCE = 5.0 V

f = 100 MHz

TJ = 25°C

100k

70k

50k

30k

20k

10k

7.0k

5.0k

3.0k

2.0k

7.0 10

20

30

50 70 100

200 300

500

TJ = 125°C

25°C

-55°C

VCE = 5.0 V

0.1 0.2 0.5 1.0 2.0

5.0 10 20 50 100 200 500 1000

TJ = 25°C

IC = 10 mA 50 mA

250 mA 500 mA

Figure 10. “On” Voltages

IC, COLLECTOR CURRENT (mA)

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

1.6

5.0

-1.0

1.4

1.2

1.0

0.8

0.6

7.0

10

20 30

50 70 100 200 300

500

VBE(sat) @ IC/IB = 1000

TJ = 25°C

VBE(on) @ VCE = 5.0 V

VCE(sat) @ IC/IB = 1000

-2.0

-3.0

-4.0

-5.0

-6.0

5.0 7.0 10

20 30

50 70 100

200 300

500

25°C TO 125°C

-55°C TO 25°C

*RqVC FOR VCE(sat)

qVB FOR VBE

25°C TO 125°C

-55°C TO 25°C

*APPLIES FOR IC/IB ≤ hFE/3.0

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