2N6989JAN datasheet(2/2 Pages) MICROSEMI | MULTIPLE NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR

2 page

2N6989, 2N6990 JAN, SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS

(4)

Forward-Current Transfer Ratio

IC = 0.1 mAdc, VCE = 10 Vdc

IC = 1.0 mAdc, VCE = 10 Vdc

IC = 10 mAdc, VCE = 10 Vdc

IC = 150 mAdc, VCE = 10 Vdc

IC = 500 mAdc, VCE = 10 Vdc

hFE

100

325

300

Collector-Emitter Saturation Voltage

IC = 150 mAdc, IB = 15 mAdc

IC = 500 mAdc, IB = 50 mAdc

VCE(sat)

0.3

1.0

Vdc

Base-Emitter Saturation Voltage

IC = 150 mAdc, IB = 15 mAdc

IC = 500 mAdc, IB = 50 mAdc

VBE(sat)

0.6

1.2

2.0

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz

h



2.5

8.0

Forward Current Transfer Ratio

IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz

hfe

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

Cobo

8.0

Input Capacitance

VEB = 0.5 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

Cibo

(4) Pulse Test: Pulse Width = 300

µs, Duty Cycle ≤ 2.0%.

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

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