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2N7368JANTXV Datasheet(PDF) 2 Page - Microsemi Corporation

Part # 2N7368JANTXV
Description  NPN HIGH POWER SILICON TRANSISTOR
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N7368JANTXV Datasheet(HTML) 2 Page - Microsemi Corporation

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2N7368 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.0 Vdc
IC = 3.0 Adc, VCE = 2.0 Vdc
hFE
50
30
175
140
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
VCE(sat)
1.0
Vdc
Base-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
VBE(sat)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz
h
fe
4.0
20
Output Capacitance
VCB =10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
500
pF
SAFE OPERATING AREA
DC Tests
TC = +25
0C, 1 Cycle, t
≥ 1.0 s
Test 1
VCE = 11.5 Vdc, IC = 10 Adc
Test 2
VCE = 45 Vdc, IC = 2.5 Adc
Test 3
VCE = 60 Vdc, IC = 0.9 Adc
(2) Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


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