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2PA1774RM Datasheet(PDF) 4 Page - NXP Semiconductors |
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2PA1774RM Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 2004 Feb 19 4 Philips Semiconductors Product specification PNP general purpose transistor 2PA1774M series CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current VCB = −30 V; IE =0 −−100 nA VCB = −30 V; IE = 0; Tj = 150 °C −−5 µA IEBO emitter-base cut-off current VEB = −4 V; IC =0 −−100 nA hFE DC current gain VCE = −6 V; IC = −1mA 2PA1774QM 120 270 2PA1774RM 180 390 2PA1774SM 270 560 VCEsat collector-emitter saturation voltage IC = −50 mA; IB = −5 mA; note 1 −−200 mV Cc collector capacitance IE =ie = 0; VCB = −12 V; f = 1 MHz − 2.2 pF fT transition frequency VCE = −12 V; IC = −2 mA; f = 100 MHz 100 − MHz handbook, halfpage MDB663 IC (mA) −10−1 −1 −10 −102 −103 103 hFE 102 10 (1) (2) (3) Fig.2 DC current gain; typical values. VCE = −6V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. handbook, halfpage MDB664 VBE (mV) −400 −200 −600 −1000 −800 −1200 IC (mA) −10−1 −1 −10 −102 −103 (1) (2) (3) Fig.3 Base-emitter voltage as a function of collector current; typical values. VCE = −6V. (1) Tamb = −55 °C. (2) Tamb =25 °C. (3) Tamb = 150 °C. |
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