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BUK9615-100A Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK9615-100A Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 9 page Philips Semiconductors Product specification TrenchMOS transistor BUK9515-100A Logic level FET BUK9615-100A Fig.17. Avalanche energy test circuit. Fig.18. Maximum permissible repetitive avalanche current(I AV) versus avalanche time(tAV) for unclamped inductive loads. Fig.19. Switching test circuit. L T.U.T. VDD RGS R 01 VDS -ID/100 + - shunt VGS 0 RD T.U.T. VDD RG VDS + - VGS 0 W DSS = 0.5 ⋅ LID 2 ⋅ BV DSS/(BVDSS − VDD) 1 10 100 0.001 0.01 0.1 1 10 Avalanche Time, tAV (ms) IAV Tj prior to avanche 150ºC 25ºC November 1999 6 Rev 1.000 |
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