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ISCB730P Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCB730P Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor ISCB730P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V ICBO Collector Cutoff Current VCB= -150V; IE= 0 -1.0 μ A IEBO Emitter Cutoff Current VEB= -3.0V; IC=0 -1.0 μ A hFE-1 DC Current Gain IC= -5mA ; VCE= -5V 30 hFE-2 DC Current Gain IC= -150mA ; VCE= -5V 60 320 fT Current-Gain—Bandwidth Product IC= -100mA ; VCE= -10V 80 MHz COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 45 pF hFE-2 Classifications R Q P 60-120 100-200 160-320 |
Similar Part No. - ISCB730P |
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Similar Description - ISCB730P |
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