Electronic Components Datasheet Search |
|
M58WR032FB70ZB6E Datasheet(PDF) 7 Page - STMicroelectronics |
|
M58WR032FB70ZB6E Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 86 page 7/86 M58WR032FT, M58WR032FB SUMMARY DESCRIPTION The M58WR032FT/B is a 32 Mbit (2 Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-sys- tem on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming. The VPP pin can also be used as a control pin to provide absolute protection against program or erase. The device features an asymmetrical block archi- tecture. M58WR032FT/B has an array of 71 blocks, and is divided into 4 Mbit banks. There are 7 banks each containing 8 main blocks of 32 KWords, and one parameter bank containing 8 pa- rameter blocks of 4 KWords and 7 main blocks of 32 KWords. The Multiple Bank Architecture allows Dual Operations, while programming or erasing in one bank, Read operations are possible in other banks. Only one bank at a time is allowed to be in Program or Erase mode. It is possible to perform burst reads that cross bank boundaries. The bank architecture is summarized in Table 2., and the memory maps are shown in Figure 4. The Param- eter Blocks are located at the top of the memory address space for the M58WR032FT and at the bottom for the M58WR032FB. Each block can be erased separately. Erase can be suspended, in order to perform program in any other block, and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles using the supply voltage VDD. There are two Enhanced Factory programming commands available to speed up programming. Program and Erase commands are written to the Command Interface of the memory. An internal Program/Erase Controller takes care of the tim- ings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC stan- dards. The device supports synchronous burst read and asynchronous read from all blocks of the memory array; at power-up the device is configured for asynchronous read. In synchronous burst mode, data is output on each clock cycle at frequencies of up to 66MHz. The synchronous burst read oper- ation can be suspended and resumed. The device features an Automatic Standby mode. When the bus is inactive during Asynchronous Read operations, the device automatically switch- es to the Automatic Standby mode. In this condi- tion the power consumption is reduced to the standby value IDD4 and the outputs are still driven. The M58WR032FT/B features an instant, individu- al block locking scheme that allows any block to be locked or unlocked with no latency, enabling in- stant code and data protection. All blocks have three levels of protection. They can be locked and locked-down individually preventing any acciden- tal programming or erasure. There is an additional hardware protection against program and erase. When VPP ≤ VPPLK all blocks are protected against program or erase. All blocks are locked at Power- Up. The device includes a Protection Register to in- crease the protection of a system’s design. The Protection Register is divided into two segments: a 64 bit segment containing a unique device num- ber written by ST, and a 128 bit segment One- Time-Programmable (OTP) by the user. The user programmable segment can be permanently pro- tected. Figure 5. shows the Protection Register Memory Map. The memory is offered in a VFBGA56, 7.7 x 9mm, 8x7 active ball array, 0.75 mm pitch package. In addition to the standard version, the package is also available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECOPACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive. All packages are compliant with Lead-free soldering processes. The memory is supplied with all the bits erased (set to ’1’). |
Similar Part No. - M58WR032FB70ZB6E |
|
Similar Description - M58WR032FB70ZB6E |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |