Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FD 800 R 33 KF2
Datenblatt
data sheet
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
Tj = 25°C
VCES
3300
V
collector-emitter voltage
Tj = -25°C
3300
V
Kollektor-Dauergleichstrom
TC = 80°C
IC,nom.
800
A
DC-collector current
TC = 25 °C
IC
1300
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, TC = 80°C
ICRM
1600
A
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot
9,6
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VGES
+/- 20V
V
Dauergleichstrom
DC forward current
IF
800
A
Periodischer Spitzenstrom
repetitive peak forw. Current
tP = 1 ms
IFRM
1600
A
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
I
2tA2s
Spitzenverlustleistung der Diode
maximum power dissipation diode
Tj = 125°C
PRQM
800
kW
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
VISOL
6.000
V
Teilentladungs-Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, QPD ≤ 10 pC (acc. to IEC 1287)
VISOL
2.600
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sättigungsspannung
IC = 800 A, VGE = 15V, Tvj = 25°C
VCE sat
-
3,40
4,25
V
collector-emitter saturation voltage
IC = 800 A, VGE = 15V, Tvj = 125°C
-
4,30
5,00
V
Gate-Schwellenspannung
gate threshold voltage
IC = 80 mA, VCE = VGE, Tvj = 25°C
VGE(th)
4,2
5,1
6,0
V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cies
-
100
-
nF
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cres
-
5,4
-
nF
Gateladung
gate charge
VGE = -15V ... + 15V, VCE = 1800V
QG
-15
-
µC
Kollektor-Emitter Reststrom
VCE = 3300V, VGE = 0V, Tvj = 25°C
ICES
-
0,1
8
mA
collector-emitter cut-off current
VCE = 3300V, VGE = 0V, Tvj = 125°C
-
40
100
mA
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
IGES
-
-
400
nA
prepared by: Jürgen Göttert
date of publication : 08.06.99
approved by: Chr. Lübke; 20.07.99
revision: 2
222.200
1 (9)
Datenblatt FD 800 R 33 KF21
20.07.99
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