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HGTG20N120CND Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part # HGTG20N120CND
Description  63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

HGTG20N120CND Datasheet(HTML) 4 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
HGTG20N120CND Rev. B
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
TJ = 150
oC, R
G = 3Ω, L = 1mH, VCE = 960V
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
1
10
40
30
50
10
100
20
TC = 75
oC, V
GE = 15V, IDEAL DIODE
TC
VGE
110oC
12V
15V
15V
75oC
110oC
75oC
12V
PC = CONDUCTION DISSIPATION
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.32
oC/W, SEE NOTES
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON + EOFF)
VGE, GATE TO EMITTER VOLTAGE (V)
12
13
14
15
16
5
10
15
20
100
150
200
300
tSC
ISC
25
250
VCE = 960V, RG = 3Ω, TJ = 125
oC
02
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
20
40
68
10
80
100
60
TC = -55
oC
TC = 25
oC
TC = 150
oC
PULSE DURATION = 250
µs
DUTY CYCLE < 0.5%, VGE = 12V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
40
60
80
0
2
468
20
100
0
TC = -55
oC
TC = 25
oC
TC = 150
oC
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250
µs
10
6
ICE, COLLECTOR TO EMITTER CURRENT (A)
8
4
2
15
10
5
12
25
30
0
35
40
TJ = 25
oC, V
GE = 12V, VGE = 15V
TJ = 150
oC, V
GE = 12V, VGE = 15V
RG = 3Ω, L = 1mH, VCE = 960V
20
6
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
15
10
5
1
4
2
5
7
8
25
30
RG = 3Ω, L = 1mH, VCE = 960V
TJ = 25
oC, V
GE = 12V OR 15V
TJ = 150
oC, V
GE = 12V OR 15V
35
40
3
20
HGTG20N120CND


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