G20N120 datasheet(6/8 Pages) FAIRCHILD

Part #	G20N120

Description	63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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HGTG20N120CND Rev. B

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER

VOLTAGE

FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE

FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

FIGURE 18. DIODE FORWARD CURRENT vs FORWARD

VOLTAGE DROP

FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

CRES

0

5

10

15

20

25

0

1

CIES

COES

2

4

5

6

FREQUENCY = 1MHz

3

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

25

01

0

24

5

30

DUTY CYCLE < 0.5%, TC = 110

oC

PULSE DURATION = 250

µs

20

10

15

3

VGE = 15V OR 12V

VGE = 10V

t1

t2

PD

SINGLE PULSE

0.5

0.2

0.1

0.05

0.02

t1, RECTANGULAR PULSE DURATION (s)

10-2

10-1

100

10-5

10-3

10-2

10-1

100

10-4

DUTY FACTOR, D = t1 / t2

PEAK TJ = (PD X ZθJC X RθJC) + TC

0.01

VF, FORWARD VOLTAGE (V)

100

1

10

01

2

3

4

5

150oC

25oC

IF , FORWARD CURRENT (A)

10

20

70

20

1

30

60

10

40

5

trr

ta

50

tb

2

TC = 25

oC, dI

EC/dt = 200A/µs

HGTG20N120CND

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