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2N3819 Datasheet(PDF) 1 Page - Vishay Siliconix |
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2N3819 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page 2N3819 Vishay Siliconix Document Number: 70238 S–04028—Rev. D ,04-Jun-01 www.vishay.com 7-1 N-Channel JFET PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 100 mA D Wideband High Gain D Very High System Sensitivity D High Quality of Amplification D High-Speed Switching Capability D High Low-Level Signal Amplification D High-Frequency Amplifier/Mixer D Oscillator D Sample-and-Hold D Very Low Capacitance Switches DESCRIPTION The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz. Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products in TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N4416/2N4416A/SST4416 data sheet. 1 TO-226AA (TO-92) Top View S D G 2 3 ABSOLUTE MAXIMUM RATINGS Gate-Source/Gate-Drain Voltage –25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Gate Current 10 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature –55 to 150 _C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature –55 to 150 _C . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (1/16” from case for 10 sec.) 300 _C . . . . . . . . . . . . . . . . . . . Power Dissipationa 350 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes a. Derate 2.8 mW/ _C above 25_C |
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