Document No. D14856EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SA1129

PNP SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

©

2002

The 2SA1129 is a mold power transistor developed for mid-speed

switching, and is ideal for use as a ramp driver.

FEATURES

−7.0 A

• Low collector saturation voltage:

• Complementary transistor: 2SC2654

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

−30

V

Collector to emitter voltage

−30

V

Emitter to base voltage

−7.0

V

Collector current (DC)

−7.0

A

Collector current (pulse)

PW

≤ 300

µs,

duty cycle

≤ 10%

−15

A

Base current (DC)

−3.5

A

°C

40

W

Total power dissipation

°C

1.5

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

ORDERING INFORMATION

Part No.

Package

2SA1129

TO-220AB

(TO-220AB)