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RLT1060M-350G Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # RLT1060M-350G
Description  High Power Infrared Laser Diode
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RLT1060M-350G Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

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ROITHNER LASERTECHNIK
SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
office@roithner-laser.com
www.roithner-laser.com
RLT1060M-350G TECHNICAL DATA
High Power Infrared Laser Diode
Lasing mode structure: multi mode
Lasing wavelength: typ. 1060 nm
Optical power: 350 mW
Package: 9 mm (SOT-148)
PIN CONNECTION:
1) Laser diode anode
2) Laser diode cathode and photodiode cathode
3) Photodiode anode
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Optical Output Power
Po
400
mW
LD Reverse Voltage
VR(LD)
1.5
V
PD Reverse Voltage
VR(PD)
10
V
Operating Temperature
TC
-20 .. +40
°C
Storage Temperature
TSTG
-40 .. +70
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Optical Output Power
Po
cw
350
mW
Threshold Current
Ith
cw
25
30
mA
Operation Current
Iop
Po = 350 mW
370
380
390
mA
Forward Voltage
Uf
Po = 350 mW
1.6
1.7
V
Lasing Wavelength
λ
p
Po = 350 mW
1055
1060
1064
nm
Spectral Width FWHM
∆λ
Po = 350 mW
0.2
0.3
nm
Beam Divergence
θ
//
Po = 350 mW
25
°
Beam Divergence
θ
Po = 350 mW
40
°
Monitor Current
Im
Po = 350 mW
100
500
1500
µA
NOTE!
LASERDIODE
MUST BE COOLED!


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