KAB02D100M-TLGP datasheet(4/72 Pages) SAMSUNG

Part #	KAB02D100M-TLGP

Description	Multi-Chip Package MEMORY

Download	72 Pages

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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4 / 72 page

KAB0xD100M - TxGP

Revision 1.11

August 2003

- 4 -

MCP MEMORY

SEC Only

256 Words

8 Words

Page Register

(=256 Bytes)

32K Pages

(=1024 Blocks)

256 Words

16 bit

8 Words

1 Block =32 Pages

= (8K + 256) Words

DQ 0 ~ DQ 15

1 Page = 264 Words

1 Block = 264 Words x 32 Pages

= (8K + 256) Words

1 Device = 264 Words x 32Pages x 1024Blocks

= 132 Mbits

Page Register

Figure 2. NAND Flash ARRAY ORGANIZATION

NOTE: Column Address : Starting Address of the Register.

* L must be set to "Low"

DQ 0

DQ 1

DQ 2

DQ 3

DQ 4

DQ 5

DQ 6

DQ 7

DQ8 to 15

1st Cycle

A0

A1

A2

A3

A4

A5

A6

A7

*L

2nd Cycle

A9

A10

A11

A12

A13

A14

A15

A16

*L

3rd Cycle

A17

A18

A19

A20

A21

A22

A23

*L

Column Address

Row Address

(Page Address)

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KAB02D100M-TLGP Datasheet(PDF) 4 Page - Samsung semiconductor

KAB02D100M-TLGP Datasheet(HTML) 4 Page - Samsung semiconductor

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