BS62LV1603FIP55 datasheet(3/9 Pages) BSI

Part #	BS62LV1603FIP55

Description	Very Low Power/Voltage CMOS SRAM 2M X 8 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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Revision 1.1

Jan.

2004

3

R0201-BS62LV1603

1. Typical characteristics are at TA = 25oC.

2. Fmax = 1/t

RC .

3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

4. Icc_Max. is 45mA(@55ns) / 36mA(@70ns) during 0~70oC operation.

5. IccsB1 is 10uA at Vcc=3.0V and TA=70oC.

DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )

1. Vcc = 1.5V, TA = + 25OC

2. t

RC = Read Cycle Time

3. IccDR(Max.) is 2.5uA at TA=70OC.

DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )

BSI

LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )

CE1

Data Retention Mode

Vcc

t CDR

Vcc

t R

VIH

Vcc

VDR

1.5V

≥

CE1

Vcc - 0.2V

≥

BS62LV1603

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP. (1)

MAX.

UNITS

VDR

Vcc for Data Retention

CE1≧ Vcc - 0.2V or CE2 ≦ 0.2V,

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

1.5

--

V

ICCDR

(3)

Data Retention Current

CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

--

1.5

5

uA

tCDR

Chip Deselect to Data

Retention Time

0

--

ns

tR

Operation Recovery Time

See Retention Waveform

TRC

(2)

--

ns

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN. TYP. (1) MAX.

UNITS

VIL

Guaranteed Input Low

Voltage

(3)

Vcc=3V

-0.5

--

0.8

V

VIH

Guaranteed Input High

Voltage

(3)

Vcc=3V

2.0

--

Vcc+0.3

V

IIL

Input Leakage Current

Vcc = Max, VIN = 0V to Vcc

--

1

uA

ILO

Output Leakage Current

Vcc = Max, CE1 = VIH or CE2 = VIL or

OE = VIH, VI/O = 0V to Vcc

--

1

uA

VOL

Output Low Voltage

Vcc = Max, IOL = 2mA

Vcc=3V

--

0.4

V

VOH

Output High Voltage

Vcc = Min, IOH = -1mA

Vcc=3V

2.4

--

V

55ns

--

46

ICC

(4)

Operating Power Supply

Current

CE1= VIL, CE2= VIH,

IDQ = 0mA, F = Fmax

(2)

70ns

Vcc=3V

--

37

mA

ICCSB

Standby Current-TTL

CE1 = VIH or CE2= VIL, IDQ = 0mA

Vcc=3V

--

1.3

mA

ICCSB1

(5)

Standby Current-CMOS

CE1≧Vcc-0.2V or CE2≦0.2V

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

Vcc=3V

--

3

20

uA

LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )

CE2

Data Retention Mode

Vcc

t CDR

Vcc

t R

VIL

Vcc

VDR ≧ 1.5V

CE2 ≦ 0.2V

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