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TFDS6502E Datasheet(PDF) 6 Page - Vishay Siliconix |
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TFDS6502E Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 17 page TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E Vishay Semiconductor Rev. B1.6, 02–Nov–00 6 www.vishay.com Document Number 82526 Optoelectronic Characteristics Tamb = 25_C, VCC = 2.6 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameters Test Conditions Symbol Min. Typ. Max. Unit Receiver Minimum Detection Threshold Irradiance, SIR Mode TFDS6502E/ TFDT6502E 9.6 kbit/s to 115.2 kbit/s l = 850 nm to 900 nm Ee 20 35 mW/m2 SIR Mode TFDU6102E, TFDS6402 9.6 kbit/s to 115.2 kbit/s l = 850 nm to 900 nm Ee 25 40 mW/m2 Minimum Detection Threshold Irradiance, MIR Mode TFDS6502E/ TFDT6502E 1.152 Mbit/s l = 850 nm to 900 nm Ee 50 mW/m2 MIR Mode TFDU6102E, TFDS6402 1.152 Mbit/s l = 850 nm to 900 nm Ee 65 mW/m2 Minimum Detection Threshold Irradiance, FIR Mode TFDS6502E/ TFDT6502E 4.0 Mbit/s l = 850 nm to 900 nm Ee 65 100 mW/m2 FIR Mode TFDU6102E, TFDS6402 4.0 Mbit/s l = 850 nm to 900 nm Ee 85 100 mW/m2 Maximum Detection Threshold Irradiance l = 850 nm to 900 nm Ee 5 10 kW/m2 Logic LOW Receiver Input Irradiance Ee 4 mW/m2 Rise Time of Output Signal––,,,,klll 10% to 90%, @2.2 k Ω, 15 pF tr (Rxd) 10 40 ns Fall Time of Output Signal 90% to 10%, @2.2 k Ω, 15 pF tf (Rxd) 10 40 ns Rxd Pulse Width of Input pulse length 20 µs, 9.6 kbit/s tPW 1.2 10 20 µs Rxd Pulse Width of Output Signal, 50% SIR Mode Input pulse length 1.41 ms, 115.2 kbit/s tPW 1.2 1/2 bit length µs Rxd Pulse Width of Output Signal, 50% MIR Mode Input pulse length 217 ns, 1.152 Mbit/s tPW 110 260 ns Rxd Pulse Width of Output Signal 50% Input pulse length 125 ns, 4.0 Mbit/s tPW 100 160 ns Output Signal, 50% FIR Mode Input pulse length 250 ns, 4.0 Mbit/s tPW 200 290 ns Stochastic Jitter, Leading Edge, FIR Mode Input Irradiance = 100 mW/m2, 4.0 Mbit/s ±10 ns Latency tL 120 300 µs |
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