2

QM2502W

Dual N-Ch 20V Fast Switching MOSFETs

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

20

---

---

V

---

0.024

---

V/℃

Static Drain-Source On-Resistance

2

---

17

22

mΩ

---

21

28

Gate Threshold Voltage

0.5

0.8

1.2

V

---

-3.58

---

mV/℃

Drain-Source Leakage Current

---

---

1

uA

---

---

5

Gate-Source Leakage Current

---

---

±100

nA

gfs

Forward Transconductance

---

25.4

---

S

Gate Resistance

---

1.5

3

Ω

Total Gate Charge (4.5V)

---

11.3

15.8

nC

Gate-Source Charge

---

1.59

2.2

Gate-Drain Charge

---

2.86

4.0

Turn-On Delay Time

---

5

10.0

ns

Rise Time

---

53.4

96

Turn-Off Delay Time

---

27

54

Fall Time

---

8.8

17.6

Input Capacitance

---

865

1211

pF

Output Capacitance

---

86

120

Reverse Transfer Capacitance

---

72

101

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

Continuous Source Current

1,4

---

---

5.8

A

Pulsed Source Current

2,4

---

---

24

A

Diode Forward Voltage

2

---

---

1.2

V

Reverse Recovery Time

---

8.3

---

nS

Reverse Recovery Charge

---

2.4

---

nC

Note :

1.The data tested by surface mounted on a 1 inch

2.The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3.The power dissipation is limited by 150℃ junction temperature

Diode Characteristics