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QM2534M9 Datasheet(PDF) 2 Page - uPI Group Inc. |
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QM2534M9 Datasheet(HTML) 2 Page - uPI Group Inc. |
2 / 6 page 機密 第 2 頁 2016-03-17 - 2 - 2 QM2534M9 Dual N-Channel 20V Fast Switching MOSFET Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.015 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V , ID=10A 4.0 7.8 9.7 mΩ VGS=4.0V , ID=10A 4.0 8.0 10.0 mΩ VGS=3.8V , ID=10A 5.0 8.2 10.5 mΩ VGS=3.1V , ID=9A 6.0 9.2 12.0 mΩ VGS=3.0V , ID=9A 6.0 9.2 12.0 mΩ VGS=2.5V , ID=8A 6.0 10.5 13.0 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 0.7 1.2 V △VGS(th) VGS(th) Temperature Coefficient --- -3 --- mV/℃ IDSS Drain-Source Leakage Current VDS=16V , VGS=0V , TJ=25℃ --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±10 uA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 6.2 12.4 Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=10A --- 23 --- nC Qgs Gate-Source Charge --- 3.5 --- Qgd Gate-Drain Charge --- 8.4 --- Td(on) Turn-On Delay Time VDD=10V , VGS=4.5V , RG=3.3Ω, ID=10A --- 10.2 --- ns Tr Rise Time --- 41 --- Td(off) Turn-Off Delay Time --- 67 --- Tf Fall Time --- 31 --- Ciss Input Capacitance VDS=15V , VGS=0V , F=1MHz --- 1767 --- pF Coss Output Capacitance --- 184 --- Crss Reverse Transfer Capacitance --- 155 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 10.6 A ISM Pulsed Source Current 2,4 --- --- 50 A VSD Diode Forward Voltage 2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , TJ=25℃ --- 10.7 --- nS Qrr Reverse Recovery Charge --- 3.6 --- nC Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature. 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. |
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