3

Doc. No. 2118, Rev. J

CAT5116

NOTES:

(1) This parameter is tested initially and after a design or process change that affects the parameter.

RELIABILITY CHARACTERISTICS

Symbol

Parameter

Test Method

Min

Typ

Max

Units

ESD Susceptibility

MIL-STD-883, Test Method 3015

2000

Volts

Latch-Up

JEDEC Standard 17

100

mA

Data Retention

MIL-STD-883, Test Method 1008

100

Years

Endurance

MIL-STD-883, Test Method 1003

1,000,000

Stores

Power Supply

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Operating Voltage Range

2.5

5.5

V

Supply Current (Increment)

100

µA

50

Supply Current (Write)

1

mA

500

µA

Supply Current (Standby)

0.01

1

µA

U/

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Input Leakage Current

10

µA

Input Leakage Current

-10

µA

TTL High Level Input Voltage

4.5V

2

V

TTL Low Level Input Voltage

0

0.8

V

CMOS High Level Input Voltage

2.5V

V

CMOS Low Level Input Voltage

-0.3

V

Logic Inputs

ABSOLUTE MAXIMUM RATINGS

Supply Voltage

Inputs

CS to GND ........................ -0.5V to VCC to +0.5V

INC to GND ....................... -0.5V to VCC to +0.5V

U

/D to GND ....................... -0.5V to VCC to +0.5V

Operating Ambient Temperature ........ -40

°C to +85°C

Junction Temperature (10 secs) ..................... +150

°C

Storage Temperature ...................................... +150

°C

Lead Soltering (10 sec max) ........................... +300

°C

*Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Absolute Maximum

Ratings are limited values applied individually while other param-

eters are within specified operating conditions, and functional

operation at any of these conditions is NOT implied. Device

performance and reliability may be impaired by exposure to

absolute rating conditions for extended periods of time.