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SUB65P04-15 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SUB65P04-15 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 5 page SUP/SUB65P04-15 Vishay Siliconix New Product www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71174 S-00831—Rev. A, 01-May-00 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 0.3 0.6 0.9 1.2 0 0.5 1.0 1.5 2.0 –50 –25 0 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) 100 10 1 VGS = 10 V ID = 30 A Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 35 40 45 50 55 60 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (_C) tin (Sec) 1000 10 0.00001 0.001 0.1 1 100 0.01 0.0001 IAV (A) @ TA = 25_C IAV (A) @ TA = 150_C 1 0.1 ID = 250 mA TJ = 25_C TJ = 150_C |
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