ZX5T851A datasheet(4/6 Pages) ZETEX

Part #	ZX5T851A

Description	60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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ZX5T851A

SEMICO NDUC TORS

ISSUE 1 - NOVEMBER 2003

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

Collector-base breakdown voltage

BVCBO

150

190

V

IC=100 A

Collector-emitter breakdown voltage

BVCER

150

190

V

IC=1 A, RB 1k

Collector-emitter breakdown voltage

BVCEO

60

80

V

IC=10mA*

Emitter-base breakdown voltage

BVEBO

78.1

V

IE=100 A

Collector cut-off current

ICBO

20

0.5

nA

A

VCB=120V

V

CB=120V, Tamb=100 C

Collector cut-off current

ICER

R

1k

20

0.5

nA

A

VCB=120V

V

CB=120V, Tamb=100 C

Emitter cut-off current

IEBO

10

nA

VEB=6V

Collector-emitter saturation voltage

VCE(SAT)

18

40

45

95

170

30

55

65

130

210

mV

IC=100mA, IB=5mA*

I

C=1A, IB=100mA*

I

C=1A, IB=50mA*

I

C=2A, IB=50mA*

I

C=5A, IB=200mA*

Base-emitter saturation voltage

VBE(SAT)

950

1050

mV

IC=4A, IB=200mA*

Base-emitter turn-on voltage

VBE(ON)

840

950

mV

IC=4A, VCE=1V*

Static forward current transfer ratio

hFE

100

55

20

200

105

40

300

IC=10mA, VCE=1V*

I

C=2A, VCE=1V*

I

C=5A, VCE=1V*

I

C=10A, VCE=1V*

Transition frequency

fT

130

MHz IC=100mA, VCE=10V

f=50MHz

Output capacitance

COBO

31

pF

VCB=10V, f=1MHz*

Switching times

tON

tOFF

42

760

ns

IC=1A, VCC=10V,

IB1=IB2=100mA

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

* Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

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