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K6R3024V1D-HI12 Datasheet(PDF) 8 Page - Samsung semiconductor

Part # K6R3024V1D-HI12
Description  128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R3024V1D-HI12 Datasheet(HTML) 8 Page - Samsung semiconductor

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K6R3024V1D
CMOS SRAM
Revision 1.0
- 8 -
December 2001
for AT&T
NOTES(WRITE CYCLE)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ;
A write ends at the earliest transition CS going high or WE going high. tWP is measured from the beginning of write to the end of
write.
3. tCW is measured from the later of CS going low to end of write.
4. tAS is measured from the address valid to the beginning of write.
5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.
6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
of the output must not be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.
9. Dout is the read data of the new address.
10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
applied.
11. CS represents CS1 , CS2 and CS3 in this data sheet. CS2 as of opposite polarity to CS1 and CS3.
TIMING WAVEFORM OF WRITE CYCLE(3) (CS = Controlled)
Address
CS
tAW
tDW
tDH
Data Valid
WE
Data in
Data out
High-Z
High-Z(8)
tCW(3)
tWP(2)
tAS(4)
tWC
tWR(5)
High-Z
High-Z
tLZ
tWHZ(6)


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