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CAT34FC02VP2ITE13REVE Datasheet(PDF) 2 Page - Catalyst Semiconductor

Part # CAT34FC02VP2ITE13REVE
Description  2-kb I2C Serial EEPROM, Serial Presence Detect
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Manufacturer  CATALYST [Catalyst Semiconductor]
Direct Link  http://www.catalyst-semiconductor.com
Logo CATALYST - Catalyst Semiconductor

CAT34FC02VP2ITE13REVE Datasheet(HTML) 2 Page - Catalyst Semiconductor

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CAT34FC02
2
Doc. No. 1045, Rev. L
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAPACITANCE TA = 25°C, f = 400 kHz, VCC = 5 V
Symbol
Test
Conditions
Min
Typ
Max
Units
CI/O(3)
Input/Output Capacitance (SDA)
VI/O = 0 V
8
pF
CIN(3)
Input Capacitance (other pins)
VIN = 0 V
6
pF
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias
–55
°C to +125°C
Storage Temperature ....................... –65
°C to +150°C
Voltage on Any Pin with
Respect to Ground(1) ............ –2.0 V to VCC + 2.0 V
VCC with Respect to Ground ............. –2.0 V to +7.0 V
Package Power Dissipation
Capability (TA = 25
°C) .................................. 1.0 W
Note:
(1) The minimum DC input voltage is –0.5 V. During transitions, inputs may undershoot to –2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC + 0.5 V, which may overshoot to VCC + 2.0 V for periods of less than 20 ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100 and
JEDEC test methods.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1.0 V to VCC + 1.0 V.
(5) Maximum standby current (ISB) = 10µA for the Extended Automotive temperature range.
(6) Maximum ESD susceptibility for die revision A = 2000 Volts.
D.C. OPERATING CHARACTERISTICS
VCC = 1.7 V to 5.5 V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
ICC
Power Supply Current (Read)
fSCL = 100 kHz
1
mA
ICC
Power Supply Current (Write)
fSCL = 100 kHz
3
mA
ISB(5)
Standby Current (VCC = 5.0 V)
VIN = GND or VCC
1
µA
ILI
Input Leakage Current
VIN = GND to VCC
1
µA
ILO
Output Leakage Current
VOUT = GND to VCC
1
µA
VIL
Input Low Voltage
–1VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 1.0
V
VOL1
Output Low Voltage (VCC = 3.0 V)
IOL = 3 mA
0.4
V
VOL2
Output Low Voltage (VCC = 1.7 V)
IOL = 1.5 mA
0.5
V
Lead Soldering Temperature (10 seconds) ...... 300
°C
Output Short Circuit Current(2) ....................... 100 mA
*COMMENT
Stresses above those listed under “Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions
outside of those listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for extended periods
may affect device performance and reliability.
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Min.
Max.
Units
NEND(3)
Endurance
1,000,000
Cycles/Byte
TDR(3)
Data Retention
100
Years
VZAP(3)(6)
ESD Susceptibility
4000
Volts
ILTH(3)(4)
Latch-up
100
mA


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