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HY57V283220TP-6 Datasheet(PDF) 8 Page - Hynix Semiconductor |
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HY57V283220TP-6 Datasheet(HTML) 8 Page - Hynix Semiconductor |
8 / 15 page Rev. 0.9 / July 2004 8 HY57V283220(L)T(P) / HY5V22(L)F(P) DC CHARACTERISTICS II (DC operating conditions unless otherwise noted) Note : 1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open 2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3.HY57V283220T(P)(HY5V22F(P))-5/55/6/7/H/8/P/S 4.HY57V283220LT(P)(HY5V22LF(P))-5/55/6/7/H/8/P/S Parameter Symbol Test Condition Speed Unit Note -5 -55 -6 -7 -H -8 -P S Operating Current IDD1 Burst length=1, One bank active tRC ≥ tRC(min), IOL=0mA 120 120 110 100 100 100 90 90 mA 1 Precharge Standby Current in power down mode IDD2P CKE ≤ VIL(max), tCK = 10ns 2 mA IDD2PS CKE ≤ VIL(max), tCK = ∞ 1 Precharge Standby Current in non power down mode IDD2N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 10ns Input signals are changed one time during 2clks. All other pins ≥ VDD- 0.2V or ≤ 0.2V 14 mA IDD2NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 9 Active Standby Current in power down mode IDD3P CKE ≤ VIL(max), tCK = 10ns 7 mA IDD3PS CKE ≤ VIL(max), tCK = ∞ 6 Active Standby Current in non power down mode IDD3N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 10ns Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 17 mA IDD3NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 13 Burst Mode Operating Current IDD4 t tCK ≥ tCK(min), IOL=0mA All banks active CL=3 230 220 200 180 180 150 130 130 mA 1 CL=2 - --- -- 130 130 Auto Refresh Current IDD5 tRC ≥ tRC(min), All banks active 170 160 150 140 140 140 140 140 mA 2 Self Refresh Current IDD6 CKE ≤ 0.2V 2 mA 3 0.8 4 |
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