HY57V283220TP-H datasheet(1/15 Pages) HYNIX

Part #	HY57V283220TP-H

Description	4 Banks x 1M x 32Bit Synchronous DRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

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HY57V283220(L)T(P)/ HY5V22(L)F(P)

4 Banks x 1M x 32Bit Synchronous DRAM

This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume

any responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.9 / July 2004

Revision History

Revision No.

History

Remark

0.1

Defined Preliminary Specification

0.2

1) Modified FBGA Ball Configuration Typo.

2) Changed Functional Block Diagram from A10 to A11.

3) Changed VDD min from 3.0V to 3.135V.

4) Changed Cap. Value from C11, 3, 5 to 4pf & C12, 3.8 to 4pf.

5) Insert tAC2 Value.

6) Insdrt tRAS & CLK Value.

0.3

Defined IDD Spec.

0.4

Delited Preliminary.

0.5

Changed IDD Spec.

0.6

133MHz Speed Added

0.7

Changed FBGA Package Size from 11x13 to 8x13.

0.8

1) Changed VDD min from 3.135V to 3.0V.

2) Changed VIL min from VSSQ-0.3V to -0.3V.

0.9

Modified of size erra. (Page15)

(Equation : 13.00 ± 10 -> 13.00 ± 0.10)

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