DS3231SN datasheet(3/19 Pages) DALLAS

Part #	DS3231SN

Description	Extremely Accurate I2C-Integrated RTC/TXO/Crystal

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Manufacturer	DALLAS [Dallas Semiconductor]

Direct Link	https://www.maximintegrated.com/en.html

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3 / 19 page

Extremely Accurate I2C-Integrated

RTC/TCXO/Crystal

_____________________________________________________________________

3

ELECTRICAL CHARACTERISTICS (continued)

(VCC = 2.3V to 5.5V, VCC > VBAT, TA = TMIN to TMAX, unless otherwise noted.) (Typical values are at VCC = 3.3V, VBAT = 3.0V, and

TA = +25°C, unless otherwise noted.) (Notes 1, 2)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Output Frequency

fOUT

VCC = 3.3V or VBAT = 3.3V

32.768

kHz

0°C to +40°C

±2

Frequency Stability vs.

Temperature (Commercial)

∆f/fOUT

VCC = 3.3V or

VBAT = 3.3V,

aging offset = 00h

>40°C to +70°C

±3.5

ppm

-40°C to <0°C

±3.5

0°C to +40°C

±2

Frequency Stability vs.

Temperature (Industrial)

∆f/fOUT

VCC = 3.3V or

VBAT = 3.3V,

aging offset = 00h

>40°C to +85°C

±3.5

ppm

Frequency Stability vs. Voltage

∆f/V

1

ppm/V

-40°C

0.7

+25°C

0.1

+70°C

0.4

Trim Register Frequency

Sensitivity per LSB

∆f/LSB

Specified at:

+85°C

0.8

ppm

Temperature Accuracy

Temp

VCC = 3.3V or VBAT = 3.3V

-3

+3

°C

First year

±1.0

Crystal Aging

∆f/f0

After reflow,

not production tested

0–10 years

±5.0

ppm

ELECTRICAL CHARACTERISTICS

(VCC = 0V, VBAT = 2.3V to 5.5V, TA = TMIN to TMAX, unless otherw.ise noted.) (Note 1)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

VBAT = 3.63V

70

Active Battery Current

IBATA

EOSC = 0, BBSQW = 0,

SCL = 400kHz (Note 4)

VBAT = 5.5V

150

µA

VBAT = 3.63V

0.84

3.0

Timekeeping Battery Current

IBATT

EOSC = 0, BBSQW = 0,

EN32kHz = 1,

SCL = SDA = 0V or

SCL = SDA = VBAT (Note 4)

VBAT = 5.5V

1.0

3.5

µA

VBAT = 3.63V

575

Temperature Conversion Current

IBATTC

EOSC = 0, BBSQW = 0,

SCL = SDA = 0V or

SCL = SDA = VBAT

VBAT = 5.5V

650

µA

Data-Retention Current

IBATTDR

EOSC = 1, SCL = SDA = 0V, +25°C

100

nA

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