Switching Diodes

1

Publication date: March 2004

SKF00023BED

Note) *:t = 1 s

Silicon epitaxial planar type

For switching circuits

■ Features

• Short reverse recovery time t

rr

• Small terminal capacitance C

t

• Allowing high-density mounting

■ Absolute Maximum Ratings T

Unit: mm

Parameter

Symbol

Rating

Unit

Reverse voltage

80

V

Maximum peak reverse voltage

80

V

Forward current

100

mA

Peak forward current

225

mA

Non-repetitive peak forward

500

mA

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

1.2

V

Reverse voltage

= 100 µA80

V

Reverse current

= 75 V

100

nA

Terminal capacitance

2

pF

= 10 mA, V

R

= 6 V

3

ns

= 0.1 I

= 100 Ω

■ Electrical Characteristics T

Bias Application Unit (N-50BU)

90%

Pulse Generator

(PG-10N)

R

Wave Form Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

V

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 100 MHz.

Note) The part numbers in the parenthesis show conventional part number.

Marking Symbol:

• MA3S132A: MB • MA3S132K: MI

Internal Connection

12

3

12

3

EIAJ: SC-81

SSMini3-F2 Package

MA3S132A MA3S132K

1 Cathode

Anode

2 N.C.

N.C.

3 Anode

Cathode

3

12

(0.80)

1.60

+0.05

–0.03

0.12

+0.05

–0.02

0.60

+0.05

–0.03

(0.80)

(0.51)

(0.51)

3˚

A

K