SI6473DQ datasheet(2/4 Pages) VISHAY

Part #	SI6473DQ

Description	P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si6473DQ

Vishay Siliconix

New Product

www.vishay.com

S FaxBack 408-970-5600

2-2

Document Number: 71164

S-01042—Rev. B, 15-May-00

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–0.45

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = –16 V, VGS = 0 V

–1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = –16 V, VGS = 0 V, TJ = 70_C

–10

mA

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –4.5 V

20

A

DiS

OS

R

i

a

VGS = –4.5 V, ID = –9.5 A

0.010

0.0125

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –2.5 V, ID = –8.5 A

0.013

0.016

W

VGS = –1.8 V, ID = –7.5 A

0.0175

0.0215

W

Forward Transconductancea

gfs

VDS = –15 V, ID = –9.5 A

45

S

Diode Forward Voltagea

VSD

IS = –1.5 A, VGS = 0 V

–0.64

–1.1

V

Dynamicb

Total Gate Charge

Qg

V10 V V

5 V I

9 5 A

47.5

70

C

Gate-Source Charge

Qgs

VDS = –10 V, VGS = –5 V, ID = –9.5 A

7.6

nC

Gate-Drain Charge

Qgd

7.6

Turn-On Delay Time

td(on)

V10 V R

15

W

42

60

Rise Time

tr

VDD = –10 V, RL = 15 W

I1 A V

4 5 V R

6

W

33

50

Turn-Off Delay Time

td(off)

DD

,

L

ID ^ –1 A, VGEN = –4.5 V, RG = 6 W

220

330

ns

Fall Time

tf

95

140

Source-Drain Reverse Recovery Time

trr

IF = –1.5 A, di/dt = 100 A/ms

50

80

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

6

12

18

24

30

0

0.5

1.0

1.5

2.0

0

6

12

18

24

30

036

9

12

VGS = 5 thru 2 V

TC = 125_C

–55

_C

25

_C

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

1.5 V

1 V

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