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HY57V161610ET-6I Datasheet(PDF) 9 Page - Hynix Semiconductor |
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HY57V161610ET-6I Datasheet(HTML) 9 Page - Hynix Semiconductor |
9 / 13 page HY57V161610ET-I Rev. 0.1 / Nov. 2003 9 AC CHARACTERISTICS (TA=-40°C to 85°C, VDD=3.0V to 3.6V, VSS=0VNote1,2)) Paramter Symbol -5 -55 -6 -7 Unit Note Min Max Min Max Min Max Min Max RAS cycle time Operation tRC 55 55 60 - 70 - ns Auto Refresh tRRC 55 55 60 - 70 - ns RAS to CAS delay tRCD 15 16.5 18 - 20 - ns RAS active time tRAS 40 100K 38.5 100K 40 100K 45 100K ns RAS precharge time tRP 3 3 3 - 3 - CLK RAS to RAS bank active delay tRRD 2 2 2 - 2 - CLK CAS to CAS bank active delay tCCD 1 1 1 - 1 - CLK Write command to data-in delay tWTL 0 0 0 - 0 - CLK Data-in to precharge command tDPL 1 1 1 - 1 - CLK Data-in to active command tDAL 5 4 4 - 4 - CLK DQM to data-in Hi-Z tDQZ 2 2 2 - 2 - CLK DQM to data mask tDQM 0 0 0 - 0 - CLK MRS to new command tMRD 2 2 2 - 2 - CLK Precharge to data output Hi-Z tPROZ 3 3 3 - 3 - CLK Power down exit time tPDE 1 1 1 - 1 - CLK Self refresh exit time tSRE 1 1 1 - 1 - CLK 3 Refresh Time tREF 64 64 - 64 - 64 ms |
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