HY57V161610ET-6I datasheet(9/13 Pages) HYNIX

Part #	HY57V161610ET-6I

Description	2 Banks x 512K x 16 Bit Synchronous DRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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9 / 13 page

HY57V161610ET-I

Rev. 0.1 / Nov. 2003

9

AC CHARACTERISTICS (TA=-40°C to 85°C, VDD=3.0V to 3.6V, VSS=0VNote1,2))

Paramter

Symbol

-5

-55

-6

-7

Unit

Note

Min

Max

Min

Max

Min

Max

Min

Max

RAS cycle time

Operation

tRC

55

60

-

70

-

ns

Auto Refresh

tRRC

55

60

-

70

-

ns

RAS to CAS delay

tRCD

15

16.5

18

-

20

-

ns

RAS active time

tRAS

40

100K

38.5

100K

40

100K

45

100K

ns

RAS precharge time

tRP

3

-

3

-

CLK

RAS to RAS bank active delay

tRRD

2

-

2

-

CLK

CAS to CAS bank active delay

tCCD

1

-

1

-

CLK

Write command to data-in delay

tWTL

0

-

0

-

CLK

Data-in to precharge command

tDPL

1

-

1

-

CLK

Data-in to active command

tDAL

5

4

-

4

-

CLK

DQM to data-in Hi-Z

tDQZ

2

-

2

-

CLK

DQM to data mask

tDQM

0

-

0

-

CLK

MRS to new command

tMRD

2

-

2

-

CLK

Precharge to data output Hi-Z

tPROZ

3

-

3

-

CLK

Power down exit time

tPDE

1

-

1

-

CLK

Self refresh exit time

tSRE

1

-

1

-

CLK

3

Refresh Time

tREF

64

-

64

-

64

ms

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