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BB1J3P Datasheet(PDF) 2 Page - NEC |
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BB1J3P Datasheet(HTML) 2 Page - NEC |
2 / 6 page Data Sheet D11739EJ2V0DS 2 BB1 SERIES ABSOLUTE MAXIMUM RATINGS (Ta = 25 °°°°C) Parameter Symbol Ratings Unit Collector to base volgate VCBO 30 V Colletor to emitter voltage VCEO 25 V Emitter to base voltage VEBO 10 V Collector current (DC) IC(DC) 0.7 A Collector current (Pulse) IC(pulse) Note1 1.0 A Base current (DC) IB(DC) 0.02 A Total power dissipation PT 250 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note 1 PW ≤ 10 ms, duty cycle ≤ 50 % BB1A4A ELECTRICAL CHARACTERISTICS (Ta = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = 30 V, IE = 0 100 nA DC current gain hFE1 Note 2 VCE = 2.0 V, IC = 0.1 A 300 − DC current gain hFE2 Note 2 VCE = 2.0 V, IC = 0.5 A 300 − DC current gain hFE3 Note 2 VCE = 2.0 V, IC = 0.7 A 135 − Collector saturation voltage VCE(sat)Note 2 IC = 0.5 A, IB = 5 mA 0.27 0.4 V Low level input voltage VIL Note 2 VCE = 5.0 V, IC = 100 µA 0.3 V Input resistance R1 −− − Ω E-to-B resistance R2 710 13 k Ω Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % BB1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = 30 V, IE = 0 100 nA DC current gain hFE1 Note 2 VCE = 2.0 V, IC = 0.1 A 150 400 − DC current gain hFE2 Note 2 VCE = 2.0 V, IC = 0.5 A 300 700 − DC current gain hFE3 Note 2 VCE = 2.0 V, IC = 0.7 A 135 600 − Low level output voltage VOL Note 2 VIN = 5.0 V, IC = 0.5 A 0.2 0.3 V Low level input voltage VIL Note 2 VCE = 5.0 V, IC = 100 µA 0.3 V Input resistance R1 329 470 611 Ω E-to-B resistance R2 3.29 4.7 6.11 k Ω Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % |
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