Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

BP1L3N Datasheet(PDF) 3 Page - NEC

Part # BP1L3N
Description  On-chip resistor PNP silicon epitaxial transistor For mid-speed switching
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

BP1L3N Datasheet(HTML) 3 Page - NEC

  BP1L3N Datasheet HTML 1Page - NEC BP1L3N Datasheet HTML 2Page - NEC BP1L3N Datasheet HTML 3Page - NEC BP1L3N Datasheet HTML 4Page - NEC BP1L3N Datasheet HTML 5Page - NEC BP1L3N Datasheet HTML 6Page - NEC  
Zoom Inzoom in Zoom Outzoom out
 3 / 6 page
background image
Data Sheet D11740EJ2V0DS
3
BP1 SERIES
BP1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
−22 V, IE = 0
−100
nA
DC current gain
hFE1
Note 2
VCE =
−2.0 V, IC = −0.1 A
80
DC current gain
hFE2
Note 2
VCE =
−2.0 V, IC = −0.5 A
100
DC current gain
hFE3
Note 2
VCE =
−2.0 V, IC = −0.7 A
50
Low level output voltage
VOL
Note 2
VIN =
−5.0 V, IC = −0.2 A
−0.3
−0.4
V
Low level input voltage
VIL
Note 2
VCE =
−5.0 V, IC = −100
µA
−0.3
V
Input resistance
R1
0.7
1.0
1.3
k
E-to-B resistance
R2
0.7
1.0
1.3
k
Note 2 PW
≤ 350
µs, duty cycle ≤ 2 %
BP1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
−22 V, IE = 0
−100
nA
DC current gain
hFE1
Note 2
VCE =
−2.0 V, IC = −0.1 A
200
DC current gain
hFE2
Note 2
VCE =
−2.0 V, IC = −0.5 A
100
DC current gain
hFE3
Note 2
VCE =
−2.0 V, IC = −0.7 A
50
Low level output voltage
VOL
Note 2
VIN =
−5.0 V, IC = −0.2 A
−0.4
V
Low level input voltage
VIL
Note 2
VCE =
−5.0 V, IC = −100
µA
−0.3
V
Input resistance
R1
1.54
2.2
2.86
k
E-to-B resistance
R2
710
13
k
Note 2 PW
≤ 350
µs, duty cycle ≤ 2 %
BP1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
−22 V, IE = 0
−100
nA
DC current gain
hFE1
Note 2
VCE =
−2.0 V, IC = −0.1 A
200
470
DC current gain
hFE2
Note 2
VCE =
−2.0 V, IC = −0.5 A
100
300
DC current gain
hFE3
Note 2
VCE =
−2.0 V, IC = −0.7 A
50
200
Low level output voltage
VOL
Note 2
VIN =
−5.0 V, IC = −0.2 A
−0.28
−0.4
V
Low level input voltage
VIL
Note 2
VCE =
−5.0 V, IC = −100
µA
−0.3
V
Input resistance
R1
2.3
3.3
4.3
k
E-to-B resistance
R2
710
13
k
Note 2 PW
≤ 350
µs, duty cycle ≤ 2 %


Similar Part No. - BP1L3N

ManufacturerPart #DatasheetDescription
logo
B. B. Battery Co., Ltd.
BP1.0-6 BB-BATTERY-BP1.0-6 Datasheet
200Kb / 1P
   VRLA Rechargeable Battery
BP1.0-6-T1 BB-BATTERY-BP1.0-6-T1 Datasheet
163Kb / 1P
   VRLA Rechargeable Battery
BP1.0-6FR BB-BATTERY-BP1.0-6FR Datasheet
200Kb / 1P
   VRLA Rechargeable Battery
BP1.0-6 BB-BATTERY-BP1.0-6_15 Datasheet
163Kb / 1P
   VRLA Rechargeable Battery
BP1.2-12 BB-BATTERY-BP1.2-12 Datasheet
225Kb / 1P
   VRLA Rechargeable Battery
More results

Similar Description - BP1L3N

ManufacturerPart #DatasheetDescription
logo
Renesas Technology Corp
FP1 RENESAS-FP1_15 Datasheet
270Kb / 10P
   on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
HQ1 RENESAS-HQ1_15 Datasheet
292Kb / 8P
   on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
logo
NEC
HR1F3P NEC-HR1F3P Datasheet
120Kb / 6P
   On-chip resistor PNP silicon epitaxial transistor For mid-speed switching
BN1A4Z NEC-BN1A4Z Datasheet
106Kb / 4P
   on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
logo
Renesas Technology Corp
AN1A3Q RENESAS-AN1A3Q Datasheet
237Kb / 6P
   on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
April 1st, 2010
AN1A4Z RENESAS-AN1A4Z Datasheet
236Kb / 6P
   on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
April 1st, 2010
logo
NEC
BN1F4Z NEC-BN1F4Z Datasheet
84Kb / 4P
   on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
logo
Renesas Technology Corp
HR1 RENESAS-HR1_15 Datasheet
400Kb / 8P
   on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
AN1F4Z RENESAS-AN1F4Z Datasheet
235Kb / 6P
   on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
April 1st, 2010
logo
NEC
BN1A3Q NEC-BN1A3Q Datasheet
109Kb / 4P
   on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
More results


Html Pages

1 2 3 4 5 6


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com