1998

©

Document No. D16171EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

COMPOUND TRANSISTOR

AP1 SERIES

on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

FEATURES

•

Current drive available up to 0.7 A

•

On-chip bias resistor

•

Low power consumption during drive

AP1 SERIES LISTS

Products

AP1A4A

−

10

AP1L2Q

0.47

4.7

AP1A3M

1.0

1.0

AP1F3P

2.2

10

AP1J3P

3.3

10

AP1L3N

4.7

10

AP1A4M

10

10

PACKAGE DRAWING (UNIT: mm)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

−25

V

Collector to emitter voltage

−25

V

Emitter to base voltage

−10

V

Collector current (DC)

−0.7

A

Collector current (Pulse)

−1.0

A

Base current (DC)

−0.02

A

Total power dissipation

750

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

*PW

≤ 10 ms, duty cycle ≤ 50 %

Electrode Connection

1. Emitter

EIAJ

: SC-43B

2. Collector JEDEC: TO-92

3. Base

IEC

: PA33