2SC3569 datasheet(1/6 Pages) NEC | NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

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1998

Document No. D16187EJ1V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SC3569

NPN

SILICON TRIPLE DIFFUSED TRANSISTOR

FOR HIGH-

VOLTAGE HIGH-SPEED SWITCHING

DATA SHEET

2002

The 2SC3569 is a mold power transistor developed for high-

voltage high-speed switching, and is ideal for use in drivers such as

switching regulators, DC/DC converters, and high-frequency power

amplifiers.

FEATURES

• Mold package that does not require an insulating board or

insulation bushing

• Low collector saturation voltage:

VCE(sat) = 1.0 V MAX. (@ 0.7 A)

• Fast switching speed:

≤ 1.0

µs MAX. (@ 0.7 A)

• Wide base reverse-bias SOA:

VCEX(SUS) = 450 V MIN. (@ 0.5 A)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

500

Collector to emitter voltage

VCEO

400

Emitter to base voltage

VEBO

7.0

Collector current (DC)

IC(DC)

2.0

Collector current (pulse)

IC(pulse)*4.0

Base current (DC)

IB(DC)

1.0

Total power dissipation

PT (Tc = 25

°C)

Total power dissipation

PT (Ta = 25

°C)

2.0

Junction temperature

150

°C

Storage temperature

Tstg

−55 to +150

°C

*PW

≤ 300

µs, duty cycle ≤ 10%

PACKAGE DRAWING (UNIT: mm)

Electrode Connection

1. Base

2. Collector

3. Emitter

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