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| 2SD1592 |
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NEC |
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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. 1998 © Document No. D16137EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan DARLINGTON POWER TRANSISTOR 2SD1592 NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING DATA SHEET 2002 FEATURES • High DC current gain due to Darlington connection • Low collector saturation • Reverse deterrence type • Ideal for use in devices such as pulse motor drivers and relay drivers of PC terminals, and ignitors of general-purpose engines. • Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25 °°°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO +300, −10 V Emitter to base voltage VEBO 10 V Collector current IC(DC) 5.0 A Collector current IC(pulse)*10 A Base current IB(DC) 0.5 A Total power dissipation PT (Tc = 25 °C) 30 W Total power dissipation PT (Ta = 25 °C) 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C *PW ≤ 300 µs, duty cycle ≤ 10% PACKAGE DRAWING (UNIT: mm) (OHFWURGH&RQQHFWLRQ %DVH &ROOHFWRU (PLWWHU |
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