2SD2165 datasheet(2/5 Pages) NEC

Part #	2SD2165

Description	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

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Manufacturer	NEC [NEC]

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Data Sheet D13178EJ3V0DS

2

2SD2165

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 60 V, IE = 0 A

10

µA

Emitter cutoff current

IEBO

VEB = 7.0 V, IC = 0 A

10

µA

DC current gain

hFE1

VCE = 5.0 V, IC = 1.0 A

Note

800

1,300

3,200

DC current gain

hFE2

VCE = 5.0 V, IC = 3.0 A

Note

500

1,000

Collector saturation voltage

VCE(sat)

IC = 3.0 A, IB = 30 mA

Note

0.3

1.0

V

Base saturation voltage

VBE(sat)

IC = 3.0 A, IB = 30 mA

Note

1.2

V

Gain bandwidth product

fT

VCE = 5.0 V, IC = 0.1 A

110

MHz

Collector capacitance

Cob

VCB = 10 V, IE = 0 A, f = 1.0 MHz

50

pF

Note Pulse test PW

≤ 350

µs, duty cycle ≤ 2%

hFE1 CLASSIFICATION

Marking

M

L

K

hFE1

800 to 1,600

1,000 to 2,000

1,600 to 3,200

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