Data Sheet D15387EJ1V0DS

7

2SK3507

PACKAGE DRAWING (Unit: mm)

TO-252 (MP-3ZK)

6.5

±0.2

2.3

±0.1

0.5

±0.1

0.77

±0.1

0.03 to 0.25

0.5

±0.1

1.0

No Plating

No Plating

5.1

±0.3

4.3 MIN.

1

4

23

1.14 MAX.

2.3

2.3

1.Gate

2.Drain

3.Source

4.Fin (Drain)

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity

as much as possible, and quickly dissipate it once, when it has occurred.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.