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UPA622TT-E1-A Datasheet(PDF) 4 Page - NEC

Part # UPA622TT-E1-A
Description  N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

UPA622TT-E1-A Datasheet(HTML) 4 Page - NEC

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Data Sheet G16113EJ2V0DS
4
µPA622TT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1
1.2
Pulsed
4.0 V
VGS = 10 V
4.5 V
VDS - Drain to Source Voltage - V
0.0001
0.001
0.01
0.1
1
10
11.522.5
3
3.5
4
V DS = 10 V
Pulsed
T A = 125°C
75°C
25°C
−25°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.4
1.6
1.8
2
2.2
2.4
-50
0
50
100
150
VDS = 10 V
ID = 1.0 m A
Tch - Channel Temperature -
°C
0.01
0.1
1
10
0.01
0.1
1
10
TA =
−25°C
25°C
75°C
125°C
VDS = 10 V
Pulsed
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
50
100
150
200
-50
0
50
100
150
Pulsed
VGS = 4.0 V, ID = 1.0 A
VGS = 10 V, ID = 1.5 A
VGS = 4.5 V, ID = 1.0 A
Tch - Channel Temperature - °C
0
50
100
150
200
0
5
10
15
20
Pulsed
ID = 1.5 A
VGS - Gate to Source Voltage - V


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