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UPA679TB Datasheet(PDF) 8 Page - NEC

Part # UPA679TB
Description  N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

UPA679TB Datasheet(HTML) 8 Page - NEC

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Data Sheet G16615EJ1V0DS
8
µµµµ PA679TB
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
1
2
3
4
-50
0
50
100
150
Pulsed
VGS =
−2.5 V, ID = −0.15 A
VGS =
−4.0 V, ID = −0.20 A
VGS =
−4.5 V, ID = −0.20 A
Tch - Channel Temperature - °C
0
1
2
3
4
0
- 2
- 4
- 6
- 8
- 10
- 12
ID =
−0.20 A
Pulsed
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
1
2
3
4
- 0.01
- 0.1
- 1
- 10
VGS =
−4.5 V
Pulsed
−25°C
25
°C
75
°C
TA = 125
°C
ID - Drain Current - A
0
1
2
3
4
- 0.01
- 0.1
- 1
- 10
VGS =
−4.0 V
Pulsed
−25°C
25
°C
75
°C
TA = 125
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
0
1
2
3
4
- 0.01
- 0.1
- 1
- 10
VGS =
−2.5 V
Pulsed
TA = 125
°C
75
°C
25
°C
−25°C
ID - Drain Current - A
1
10
100
- 0.1
- 1
- 10
- 100
VGS = 0 V
f = 1.0 MHz
C iss
C oss
C rss
VDS - Drain to Source Voltage - V


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