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2003

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DATA SHEET

Document No. G16634EJ1V0DS00 (1st edition)

Date Published October 2003 NS CP(K)

Printed in Japan

DESCRIPTION

The

directly by a 4.5 V power source.

This

switching characteristics, and is suitable for applications such as

power management switch of portable machine and so on.

FEATURES

• 4.5 V drive available

• Low on-state resistance

ORDERING INFORMATION

PART NUMBER

PACKAGE

SC-95 (Mini Mold Thin Type)

Marking: TY

30

V

±

20

V

Drain Current (DC)

±

7.0

A

Drain Current (pulse)

Note1

±

28

A

Total Power Dissipation

0.2

W

Total Power Dissipation

Note2

2.0

W

Channel Temperature

150

°C

Storage Temperature

−55 to +150

°C

Notes 1. PW

≤ 10

2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t

≤ 5 sec.

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge. (It does not have built-in G-S protection diode.)

When this product actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

PACKAGE DRAWING (Unit: mm)

0.65

0.9 to 1.1

0 to 0.1

0.16

+0.1

–0.06

0.95

1.9

2.9 ±0.2

0.32

+0.1

–0.05

0.95

123

654

1, 2, 5, 6: Drain

3

: Gate

4

: Source

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Drain