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UPA2450BTL Datasheet(PDF) 7 Page - NEC

Part # UPA2450BTL
Description  N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

UPA2450BTL Datasheet(HTML) 7 Page - NEC

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Data Sheet G16635EJ1V0DS
7
µ PA2450B
5. This device is very thin device and should be handled with caution for mechanical stress. The rate of distortion
applied to the device should become below 2000
µε.
Note1 If the rate of distortion exceeds 2000 µε, the
characteristic of a device may be degraded and it may result in failure.
Figure 2. Direction of substrate and stress
The substrate that mounted the device is on a stand with a support width of 24 mm.
The device is turned downward. The stress is applied from a top.
Measurement position
Stress
Support width 24 mm
Substrate: 33 x 6 mm, t = 0.5 mm, FR-4
The direction of a device:
Device
Bend
Figure 3. Example of the bend and the rate of distortion
Note2
0
0
0.2
0.4
0.6
0.8
1
1000
2000
3000
4000
5000
6000
Bend - mm
Recommended condition
Note 1. Definition of rate of distortion(written as
ε in this document)
ε = (l − l0)/l0
l0: Distance for two arbitrary points before receiving stress.
l: Distance above-mentioned when receiving stress.
2. The relation of the distortion and the bend changes with several conditions, such as a size of substrate and
so on.


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