UPA2708TP-E1-AZ datasheet(1/7 Pages) NEC

Part #	UPA2708TP-E1-AZ

Description	SWITCHING N-CHANNEL POWER MOSFET

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MOS FIELD EFFECT TRANSISTOR

µ PA2708TP

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No. G17034EJ1V0DS00 (1st edition)

Date Published June 2005 NS CP(K)

Printed in Japan

2004

DESCRIPTION

The µ PA2708TP which has a heat spreader is N-

channel MOS Field Effect Transistor designed for

DC/DC converter and power management applications

of notebook computer.

FEATURES

• Low on-state resistance

RDS(on)1 = 5.5 m

Ω MAX. (VGS = 10 V, ID = 9.0 A)

RDS(on)2 = 7.5 m

Ω MAX. (VGS = 4.5 V, ID = 9.0 A)

• Low Ciss: Ciss = 4700 pF TYP. (VDS = 10 V, VGS = 0 V)

• Small and surface mount package (Power HSOP8)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

Drain to Source Voltage (VGS = 0 V)

VDSS

30

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC)

ID(DC)

±40

A

Drain Current (pulse)

Note1

ID(pulse)

±68

A

Total Power Dissipation (TC = 25°C)

PT1

34

W

Total Power Dissipation

Note2

PT2

4.3

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Single Avalanche Current

Note3

IAS

17

A

Single Avalanche Energy

Note3

EAS

28.9

mJ

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1%

2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW =10 sec

3. Starting Tch = 25°C, VDD = 15 V, RG = 25

Ω, L = 100

µH, VGS = 20 → 0 V

THERMAL RESISTANCE

Channel to Ambient

Note

Rth(ch-A)

96.2

°C/W

Channel to Case

Rth(ch-C)

3.68

°C/W

Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA2708TP-E1

Power HSOP8

µ PA2708TP-E1-AZ

Note

Power HSOP8

µ PA2708TP-E2

Power HSOP8

µ PA2708TP-E2-AZ

Note

Power HSOP8

Note Pb-free (This product does not contain Pb in

external electrode.)

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